发明名称 Semiconductor device
摘要 According to one embodiment, a semiconductor storage device includes a transistor, a first node, a first capacitor, a first switch, and a second switch. One end of the transistor is connected to a first voltage source supplying a first voltage. The first node is charged to the first voltage by the transistor. One of electrodes of the first capacitor is connected to the first node, and the other of the electrodes of the first capacitor is supplied with a first clock signal having a second voltage. One end of the first switch is connected to the first node. The first switch outputs a potential of the first node at a first time at which the first switch is turned on. One end of the second switch is connected to the first node. The second switch outputs the potential of the first node at a second time.
申请公布号 US8520465(B2) 申请公布日期 2013.08.27
申请号 US201113235426 申请日期 2011.09.18
申请人 HATSUDA KOSUKE;KABUSHIKI KAISHA TOSHIBA 发明人 HATSUDA KOSUKE
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
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