| 摘要 |
A method for manufacturing a semiconductor device includes; exposing a resist layer 16 uniformly formed on a semiconductor substrate 11 using a grating mask 17 having transmission regions 17A whose transmittances decrease toward a transfer direction of charges, forming a plurality of residual resist films 18 whose film thicknesses change according to the transmittances of the grating mask 17 by developing the exposed resist layer 16, and forming a plurality of impurity layers 13 having an inner potential including a predetermined reference potential Pb and a predetermined step potential Ps by implanting ions 20 into the semiconductor substrate 11 through the residual resist films 18, wherein an acceleration voltage and a dose amount of the ion implantation device 19 are determined so that an error of the inner potential caused by an error of the film thickness of the residual resist film 18 stays within a permissible range.
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