| 摘要 |
A method for using a silicon film formation apparatus includes performing a pre-coating process to cover a reaction tube with a silicon coating film, an etching process to etch natural oxide films on product target objects, a silicon film formation process to form a silicon product film on the product target objects, and a cleaning process to etch silicon films on the reaction tube, in this order. The pre-coating process includes supplying a silicon source gas into the reaction tube from a first supply port having a lowermost opening at a first position below the process field, while exhausting gas upward from inside the reaction tube. The etching process includes supplying an etching gas into the reaction tube from a second supply port having a lowermost opening between the process field and the first position, while exhausting gas upward from inside the reaction tube by the exhaust system. |
