METAL LINE OF SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A metal line of a semiconductor device and a manufacturing method thereof are provided to improve the reliability of the semiconductor device by preventing scratches and defects. CONSTITUTION: A line window (410) is formed by patterning an interlayer insulating film (110) formed on a substrate. The surface of the interlayer insulating film is nitrified by injecting gas including nitride to a deposition device on which the substrate is arranged. A diffusion barrier (150) is formed by injecting the gas including nitride and metal gas to the deposition device. The line window is filled with metal. The metal formed on the other region except for the line window is removed by a chemical mechanical polishing (CMP) process.