| 摘要 |
PURPOSE: An plasma processing apparatus is provided to increase density of plasma by an unique structure of grounding electrodes installed at both sides of a power electrode. CONSTITUTION: A plasma processing apparatus comprises a cylinder-shaped power electrode (10) to which RF power is applied; a grounding electrode (20) installed at each lateral side of the power electrode; a reaction gas supply unit (30) supplying reaction gas into a space between the power electrode and the grounding electrode; a cooling unit (40) installed to be adjacent to the reaction gas supply unit and the grounding electrode for cooling the plasma processing apparatus by circulating a coolant. |
