| 摘要 |
A thin film transistor substrate (1) that has reduced production cost and defect rate is presented. The thin film transistor substrate (1) includes a gate wiring line (22) formed on an insulating substrate (10) and including a gate electrode (24), a data wiring line (62) formed on the gate wiring line (22) and including a source electrode (65) and a drain electrode (66), a passivation layer pattern (74) formed on parts of the data wiring line (22) other than the drain electrode (66) and a pixel region, and a pixel electrode (82) electrically connected to the drain electrode (66). The pixel electrode (82) includes zinc oxide. |
