发明名称 |
METHODS OF FORMING INTEGRATED CIRCUIT DEVICES USING MODIFIED RECTANGULAR MASK PATTERNS TO INCREASE RELIABILITY OF CONTACTS TO ELECTRICALLY CONDUCTIVE LINES |
摘要 |
<p>PURPOSE: A method for manufacturing an integrated circuit device using a modified rectangular mask pattern for increasing the contact reliability of a conductive line is provided to implement high integration with an electrical contact. CONSTITUTION: A first conductive line (112a) and a second conductive line (112b) are located on an integrated circuit board in parallel. The first conductive line and the second conductive line are selectively etched on a pair of electric interconnections with facing ends. The facing ends are defined by using a photolithography mask with a modified rectangular mask pattern. A photoresist pattern (104a) is defined on the integrated circuit board by using the modified rectangular mask pattern. The modified rectangular mask pattern includes a first mask pattern (100) and a second mask pattern (102a,102b) which are rectangular.</p> |
申请公布号 |
KR20130094169(A) |
申请公布日期 |
2013.08.23 |
申请号 |
KR20120135438 |
申请日期 |
2012.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KIM, CHANG HWA;BURNS RYAN LANCE |
分类号 |
H01L21/027;G03F1/20 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|