发明名称 METHODS OF FORMING INTEGRATED CIRCUIT DEVICES USING MODIFIED RECTANGULAR MASK PATTERNS TO INCREASE RELIABILITY OF CONTACTS TO ELECTRICALLY CONDUCTIVE LINES
摘要 <p>PURPOSE: A method for manufacturing an integrated circuit device using a modified rectangular mask pattern for increasing the contact reliability of a conductive line is provided to implement high integration with an electrical contact. CONSTITUTION: A first conductive line (112a) and a second conductive line (112b) are located on an integrated circuit board in parallel. The first conductive line and the second conductive line are selectively etched on a pair of electric interconnections with facing ends. The facing ends are defined by using a photolithography mask with a modified rectangular mask pattern. A photoresist pattern (104a) is defined on the integrated circuit board by using the modified rectangular mask pattern. The modified rectangular mask pattern includes a first mask pattern (100) and a second mask pattern (102a,102b) which are rectangular.</p>
申请公布号 KR20130094169(A) 申请公布日期 2013.08.23
申请号 KR20120135438 申请日期 2012.11.27
申请人 SAMSUNG ELECTRONICS CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 KIM, CHANG HWA;BURNS RYAN LANCE
分类号 H01L21/027;G03F1/20 主分类号 H01L21/027
代理机构 代理人
主权项
地址