发明名称 MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND DRIVING METHOD THEREOF
摘要 To provide a memory device which operates with low power consumption, has high reliability of the stored data, and is small-size, light-weight and inexpensive, and a driving method thereof. In addition, to provide a semiconductor device which operates with low power consumption, has high reliability of the stored data and a long distance of radio frequency communication, and is small-size, light-weight and inexpensive, and a driving method thereof. The memory device includes a memory cell array in which at least memory elements are arranged in matrix, and a writing circuit. The memory element has a first conductive layer, a second conductive layer, and an organic compound layer formed therebetween, and the writing circuit includes a voltage generating circuit for generating a voltage in order to apply at plural times, and a timing controlling circuit for controlling output time of the voltage.
申请公布号 KR101298954(B1) 申请公布日期 2013.08.23
申请号 KR20077019613 申请日期 2006.01.24
申请人 发明人
分类号 G11C13/00;G11C16/02;H01L27/10 主分类号 G11C13/00
代理机构 代理人
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