NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

There is provided a nitride semiconductor light emitting device including: a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween; n-type and p-type electrodes electrically connected to the n-type and p-type nitride semiconductors, respectively; and an n-type ohmic contact layer formed between the n-type nitride semiconductor layer and the n-type electrode and having a first layer formed of a material containing In and a second layer formed on the first layer and formed of a material containing W. According to an aspect of the invention, there is provided a nitride semiconductor light emitting device that has an n-type electrode having thermal stability and excellent electrical characteristics without heat treatment. According to another aspect of the invention, there is provided a method of manufacturing a nitride semiconductor light emitting device optimized to obtain the excellent thermal and electrical characteristics.