发明名称 GATE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce voltage fluctuation noise when one driving transistor is turned on while suppressing an increase in time to turn on the other driving transistor.SOLUTION: A gate drive circuit 5 for driving a driving transistor T2 includes a CMOS circuit 9 and a turn-off resistance R1. The CMOS circuit 9 feeds an on voltage for turning on the driving transistor T2 or an off voltage for turning it off between a gate and a source of the driving transistor T2 on the basis of a control signal Sb. The CMOS circuit 9 includes a turn-on transistor M1 adapted to be turned on to turn on the driving transistor T2, and a turn-off transistor M2 adapted to be turned on to turn it off. The turn-off resistance R1 is interposed in a conduction path extending from an output node N3 of the CMOS circuit 9 to the source of the driving transistor T2 via the turn-off transistor M2.
申请公布号 JP2013165381(A) 申请公布日期 2013.08.22
申请号 JP20120027140 申请日期 2012.02.10
申请人 DENSO CORP 发明人 YAMAMOTO TAKAO;KATO HISATO;KONDO YOSUKE
分类号 H03K17/16;H02M1/08;H03K17/695 主分类号 H03K17/16
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