SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same which are suitable to reduce height of a multilayer film and to increase the degree of integration in a memory element.SOLUTION: A semiconductor device includes: a plurality of word lines and a plurality of interlayer insulating films alternately stacked over a substrate; a plurality of vertical channel films protruding from the substrate and passing through the plurality of word lines and the plurality of interlayer insulating films; a tunnel insulating film surrounding the plurality of vertical channel films; a charge trap layer surrounding the tunnel insulating film, where first regions between the tunnel insulating film and the word lines have thickness smaller than thickness of second regions between the tunnel insulating film and the interlayer insulating films; and first charge blocking film patterns surrounding the first regions of the charge trap layer.