SEMICONDUCTOR THIN FILM LASER

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor thin film laser having reduced wavelength and temperature dependence, which can extract an accurate wavelength signal in wavelength multiplex communication without causing shift of signal light to an adjacent channel even when a temperature changes.SOLUTION: In a semiconductor thin film laser, a BCB resin layer 30 which has negative refraction factor and temperature dependence is sandwiched in a substrate stacking direction by an Si waveguide 20 which has a higher refraction factor in comparison with the BCB resin layer 30 and has positive refraction factor and temperature dependence, and an InP semiconductor layer 40 which has a GaInAsP quantum well 43.