| 发明名称 |
GALLIUM NITRIDE NANOWIRE BASED ELECTRONICS |
| 摘要 |
GaN based nanowires are used to grow high quality, discreet base elements with c-plane top surface for fabrication of various semiconductor devices, such as diodes and transistors for power electronics. |
| 申请公布号 |
WO2013121289(A2) |
申请公布日期 |
2013.08.22 |
| 申请号 |
WO2013IB00640 |
申请日期 |
2013.02.12 |
| 申请人 |
QUNANO AB |
发明人 |
OHLSSON, JONAS;BJORK, MIKAEL |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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