发明名称 |
METHOD OF GROWING A HIGH QUALITY III-V COMPOUND LAYER ON A SILICON SUBSTRATE |
摘要 |
The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (AlxGa1-xN) sub-layers. Each of the sub-layers has a respective value for x that is between 0 and 1. A value of x for each sub-layer is a function of its position within the second buffer layer. A first gallium nitride (GaN) layer is epitaxially grown over the second buffer layer. A third buffer layer is then epitaxially grown over the first GaN layer. A second GaN layer is then epitaxially grown over the third buffer layer. |
申请公布号 |
US2013214281(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201213398954 |
申请日期 |
2012.02.17 |
申请人 |
LI ZHEN-YU;HSIA HSING-KUO;KUO HAO-CHUNG;TSMC SOLID STATE LIGHTING LTD. |
发明人 |
LI ZHEN-YU;HSIA HSING-KUO;KUO HAO-CHUNG |
分类号 |
H01L29/20;H01L21/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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