| 摘要 |
A single TiON film is used to form a ReRAM device by varying the oxygen and nitrogen content throughout the device to form the electrodes and switching layer. A ReRAM device that can be formed in a single deposition chamber is also disclosed. The ReRAM device can be formed by forming a first titanium nitride layer, forming atitanium oxynitride-titanium oxide-titanium oxynitride layer, and then forming a second titanium nitride. |
