| 摘要 |
To provide an etching solution composition for various sorts of metal thin films and metal oxide thin films which contains no acetic acid and has no irritating odor and less performance change, and which can be used in steps of manufacturing an electronic device such as a semiconductor apparatus or a flat panel display device. The etching solution composition for etching a metal thin film contains phosphoric acid, nitric acid, methoxy acetic acid, and water. The compound further contain an amin compound. The amin compound contains one, two or more types selected from a group of types of glycine, aspartic acid, and iminodiacetic acid. |
