发明名称 |
APPLICATION OF FLUORINE DOPED TIN (IV) OXIDE SNO2:F FOR MAKING A HEATING LAYER ON A PHOTOVOLTAIC PANEL, AND THE PHOTOVOLTAIC PANEL |
摘要 |
The invention consists in application of fluorine doped tin (IV) oxide SnO2:F (FTO) for making a heating layer on a photovoltaic panel. The invention consists also in a photovoltaic panel characterized in that its front part (1) is covered with a conductive layer (2) of fluorine doped tin (IV) oxide SnO2:F, with the electrodes (3) deposited thereon. The conductive layer (2) becomes a heating layer when connected to the source of electric current. In preferred embodiment a transarent polymer film (4) is applied thereon, inseparably and permanently bound with the conductive layer (2) of fluorine doped tin (IV) oxide SnO2:F and the photovoltaic cell (5). |
申请公布号 |
WO2013122489(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
WO2013PL00017 |
申请日期 |
2013.02.14 |
申请人 |
ML SYSTEM SPOLKA Z OGRANICZONA ODPOWIEDZIALNOSCIA |
发明人 |
SKUPIEN, KRZYSTOF;BORATYNSKI, PAWEL;STANEK, EDYTA;CYCON, DAWID |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|