METHOD AND ARRANGEMENT FOR DETERMINING STRUCTURE DEFECTS OF COMPOUND SEMICONDUCTORS, IMPROVING THE GROWTH PROCESS, AND PERFORMANCE OF THE MATERIAL AS SEMICONDUCTORS

摘要

Structural defects of a compound semiconductor is determined by applying at least two different measuring methods in the same measurement event together with a pattern recognition in order to achieve at least location and type related information of the structural defects of the semiconductor, such as locations, shapes, sizes and/or relative distances of the structural defects within said semiconductor. In addition a database is provided with the defect information of the semiconductor so that said information is connectable to said semiconductor in the database for using said defect information of the semiconductor for improving a growth process of the semiconductors, and/or for improving the performance of a sensor manufactured of said semiconductor material.