发明名称 FORMATION METHOD OF CONTACT HOLE PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a method for improving uniformity and circularity of the hole diameter of a contact pattern.SOLUTION: A method comprises: a block copolymer layer formation step of forming a layer 5 comprising a block copolymer, where a plurality of blocks are bonded, on a substrate 1 having a thin film 4 with a formed hole pattern on a surface so that the above thin film is covered; a phase separation step of phase separation of a layer comprising the above block copolymer; and a selective remove step of selectively removing a phase consisting of at least one kind of a plurality of blocks composing the above block copolymer in the layer comprising the above block copolymer, where the hole diameter of the hole pattern formed on the above thin film is 0.8 to 3.1 times the cycle of the block copolymer. In the above layer formation step, the thickness from the top face of the above thin film to the surface of the layer comprising the above block copolymer is 70% or less of the thickness of the above thin film.
申请公布号 JP2013164436(A) 申请公布日期 2013.08.22
申请号 JP20120026000 申请日期 2012.02.09
申请人 TOKYO OHKA KOGYO CO LTD;INSTITUTE OF PHYSICAL & CHEMICAL RESEARCH 发明人 SENZAKI TAKAHIRO;MIYAGI MASARU;FUJIKAWA SHIGENORI
分类号 G03F7/40;B82Y40/00;C08J7/00;H01L21/027;H01L21/3065 主分类号 G03F7/40
代理机构 代理人
主权项
地址