发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that can be obtained by a standard CMOS process capable of achieving microfabrication and operate with high voltage.SOLUTION: A data node NA is connected with a bit line to which a nonvolatile memory cell to be accessed is connected among a plurality of bit lines BTIj. A data control transistor 1 is interposed between a power source node VPP and a write voltage generation node NW. A data control switch 2 is interposed between the write voltage generation node NW and the data node NA. An input circuit 20 switches the on/off state of the data control switch 2 in accordance with a data signal Dinh. A write circuit 10 controls a gate voltage of the data control transistor 1 in accordance with a write signal WE, and in doing so, suppresses a voltage to be applied to the write voltage generation node NW by a gate voltage for the data control transistor 1. |
申请公布号 |
JP2013164886(A) |
申请公布日期 |
2013.08.22 |
申请号 |
JP20120027280 |
申请日期 |
2012.02.10 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
ASANO MASAMICHI;SHIODOME SHUNSUKE;MATSUDA HIROYUKI;IMAI YASUNORI |
分类号 |
G11C16/06;H01L21/336;H01L21/8238;H01L21/8247;H01L27/092;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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