发明名称 VOLTAGE SWITCHING IN A MEMORY DEVICE
摘要 Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.
申请公布号 US2013215688(A1) 申请公布日期 2013.08.22
申请号 US201313849586 申请日期 2013.03.25
申请人 MICRON TECHNOLOGY, INC.;MICRON TECHNOLOGY, INC. 发明人 MAROTTA GIULIO G.;MUSILLI CARLO;PERUGINI STEFANO;TORSI ALESSANDRO;VALI TOMMASO
分类号 G11C7/12 主分类号 G11C7/12
代理机构 代理人
主权项
地址