| 摘要 |
A nonvolatile memory device includes a substrate including a plurality of active regions which are constituted by a P-type semiconductor; first and second vertical strings disposed over each active region, wherein each of the first and second strings includes a channel vertically extending from the substrate, a plurality of memory cells, and a select transistor, wherein the plurality of memory cells and the select transistor are located along the channel; and a bottom gate being interposed between a lowermost memory cell and the substrate, contacting the channel with a first gate dielectric layer interposed therebetween, and controlling connection of the first vertical string with the second vertical string.
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