| 摘要 |
<p>A semiconductor element which comprises: a semiconductor substrate which has a semi-polar surface that is formed of a hexagonal group III nitride semiconductor; a first cladding layer of a first conductivity type, which is formed of Inx1Aly1Ga1-x1-y1N (wherein x1 > 0 and y1 > 0); a second cladding layer of a second conductivity type, which is formed of Inx2Aly2Ga1-x2-y2N (wherein 0 <= x2 <= 0.02 and 0.03 <= y2 <= 0.07); and a light emitting layer which is formed between the first cladding layer and the second cladding layer. This semiconductor element is provided with an epitaxial layer that is formed on the semi-polar surface of the semiconductor substrate.</p> |
