| 摘要 |
<p>[Problem] To provide a semiconductor device wherein an increase of on-resistance can be suppressed even if a voltage is continuously applied for a long period of time to between a source and a drain in a gate-off state. [Solution] A semiconductor device (1) includes: a substrate (7), which has a predetermined off angle, and which is formed of n+ SiC; a drift layer (8), which is formed of n- SiC on the substrate (7); a plurality of unit cells (10), which are demarcated in a drift layer (8) by n- epitaxial lines (13) that include first lines (11) parallel to the off direction of the substrate (7), and second lines (12) intersecting the first lines (11); a gate insulating film (17) formed on the drift layer (8); a gate electrode (18) formed on the gate insulating film (17); and a p- relaxing layer (24), which is formed on the first lines (11) in the drift layer (8), and relaxes an electrical field generated in the gate insulating film (17).</p> |
