| 摘要 |
<p>PURPOSE: A group-4 metal precursor for a metal containing film is provided to thermally stabilize the same with a liquid phase at a temperature of at least maximum 200°C, and to deposit the very equiangular metal oxide film with atomic layer deposition or circulation chemical vapor deposition at a temperature of above 300°C. CONSTITUTION: A group-4 metal precursor for a metal containing film is represented by a formula of M(OR^1)2(R^2C(O)C(R^3)C(O)OR^1)2. In the formula, the M represents a group-4 metal selected from a group of Ti, Zr, and Hf, the R^1 is selected from a group of a linear or branching type C1-10 alkyl and C6-12 aryl, the R^2 is selected from a group of a branching type C3-10 alkyl and C6-12 aryl, and the R^3 is selected from a group of hydrogen, C1-10 alkyl, and C6-12 aryl.</p> |
