| 摘要 |
PROBLEM TO BE SOLVED: To provide a growing method of a silicon single crystal, which can reduce fluctuation of resistivity in the axial direction of pulling the silicon single crystal, and in-plane resistivity in the radial direction.SOLUTION: The pulling speed of a silicon single crystal is defined as the pulling speed including a generation area of COP defects. The growth method of silicon single crystal comprises pulling a silicon single crystal containing an n-type dopant from a quartz crucible, where the interstitial oxygen concentration in the silicon single crystal is 6.0×10atoms/cmor less, the variation &Dgr;&rgr; of radial in-plane resistivity of the silicon single crystal is 5% or less; thereafter supplying silicon raw materials into a quartz crucible to be melted; and pulling newly a silicon single crystal from the crucible thereby growing a plurality of silicon single crystals. |
