| 摘要 |
<p>The present invention relates to a HEMT heterostructure, including a substrate (8) and a buffer layer (7), characterized in that it consists of the following successive layers: . (1) GaN passivation/contact layer, thickness 3nm, . (2) c) barrier layer: Al xGa 1-xN 0.15<x<0.6, thickness 3-5nm, . (3) b) barrier layer: In xAI 1-xN 0.05<x<0.3, thickness 2-15nm, . (4) a) barrier layer: Al xGa 1-xN 0.15<x<0.4, thickness 3-15nm, . (5) preferably AIN layer, thickness 0-2nm, . (6) GaN layer, thickness 1000-3000nm, . (7) buffer layer, . (8) substrate, preferably a SiC, Al 20 3, Si or 3C-SiC substrate. The present invention also relates to a method of manufacturing said HEMT heterostructure by epitaxy on a substrate (8).</p> |
