| 发明名称 |
P-Type Semiconductor Material and Semiconductor Device |
| 摘要 |
An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO3) as its main component and MoOy (2<y<3) at 4% or more.
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| 申请公布号 |
US2013214271(A1) |
申请公布日期 |
2013.08.22 |
| 申请号 |
US201313768233 |
申请日期 |
2013.02.15 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ASAMI YOSHINOBU;KATAISHI RIHO;KIKUCHI ERUMU |
| 分类号 |
H01L29/20 |
主分类号 |
H01L29/20 |
| 代理机构 |
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