SEMICONDUCTOR FILM MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

摘要

A purge gas (Gp) is supplied from the semiconductor substrate rear surface (second surface (101b))-side to the semiconductor substrate side surface through a film-forming tray (placing section) (3) from the inside of an anode electrode (4) as a CVD apparatus stage. Consequently, a doping gas that will enter the side surface (101c) and the rear surface (the second surface (101b)) of a substrate (101) is pushed out, and formation of conductive films on the substrate side surface and rear surface is suppressed, said conductive films causing leakage.