| 摘要 |
<p>A memory device for providing memory bit repair. The memory device may include memory cells. Each of the memory cells may include a measurable characteristic that identifies a stored data value (342, 344). At least one of the memory cells may have a measurable characteristic set to a defective bit state (340). A defective bit state may refer to a measurable characteristic (334) set to be outside of a working measurable characteristic range (332). The defective bit state may enable memory bit repair by identifying the at least one memory cell as being defective.</p> |
