| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device manufacturing method comprises: forming a stacked film of an interface layer 3, a HfON film 4a and a HfSiON film 5a for a gate insulation film on a principal surface of a semiconductor substrate 1; forming an Al-containing film 6 and a mask layer 7 on the HfSiON film 5a and selectively removing the mask layer 7 and the Al-containing film 6 of an nMIS formation region which is an n-channel MISFET formation scheduled region; forming a rare earth-containing film 8 on the HfSiON film 5a of the nMIS formation region 1A and on the mask layer 7 of a pMIS formation region 1B which is a p-channel MISFET formation scheduled region; performing a heat treatment to cause reaction of the HfON film 4a of the nMIS formation region 1A, the HfSiON film 5a and the rare earth-containing film 8 and reaction of the HfON film 4a of the pMIS formation region 1B, the HfSiON film 5a and the Al-containing film 6; and removing the unreacted rare earth-containing film 8 and the unreacted mask layer 7 and forming a metal gate electrode. |
