| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of attaining both reduction in capacitance of a depletion layer occurring when a reverse voltage is applied and prevention of increase in on-resistance.SOLUTION: In a semiconductor device 1 including a substrate 5 composed of n-type SiC; a drift layer 6 formed on the substrate 5 and composed of n-type SiC; and an anode electrode 11 formed on the drift layer 6 and forming a Schottky barrier with the drift layer 6, a plurality of capacity reduction layers 7 composed of a semiconductor having dopant different from the drift layer 6 or an insulator are formed so as to contact the drift layer 6 on the substrate 5 side with respect to a central portion in the thickness direction of the drift layer 6. |
