发明名称 |
LID COMPONENT, PROCESS GAS DIFFUSION SUPPLY APPARATUS, AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a lid component for a substrate processing apparatus which secures in-plane uniformity of plasma processing in a substrate.SOLUTION: A plasma processing apparatus 10 has: a processing chamber 11 housing a wafer W; and a shower head 13 supplying a process gas to the processing chamber 11. The shower head 13 has: an internal space 38 formed in the shower head 13 and spreading in parallel with a surface of the wafer W housed in the processing chamber 11; multiple gas supply holes 42 allowing the internal space 38 to communicate with the processing chamber 11; and a lid component 50. A process gas introduction tube 40 is connected with the internal space 38 through an opening 39, and the opening 39 faces a part of the multiple gas supply holes 42. The lid component 50 includes: a bottom part 51 disposed in the internal space 38 and having a surface facing the opening 39; and a side wall 52 supporting the bottom part 51 at a predetermined position. The surface of the bottom part 51 is arranged parallel with a surface of the wafer W, and the side wall 52 supports a part of the bottom part 51. |
申请公布号 |
JP2013165276(A) |
申请公布日期 |
2013.08.22 |
申请号 |
JP20130056280 |
申请日期 |
2013.03.19 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
ISHIDA HISAFUMI |
分类号 |
H01L21/3065;C23C16/455;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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