发明名称 CIRCUIT SUBSTRATE STRUCTURE
摘要 A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is disposed on the substrate and has an opening exposing the pad, wherein the dielectric stack layer includes a first dielectric layer, a second dielectric layer and a third dielectric layer located between the first dielectric layer and the second dielectric layer, and there is a gap between the portion of the first dielectric layer surrounding the opening and the portion of the second dielectric layer surrounding the opening. The first plating layer is disposed at the dielectric stack layer. The second plating layer is disposed at the pad, wherein the gap isolates the first plating layer from the second plating layer.
申请公布号 US2013214422(A1) 申请公布日期 2013.08.22
申请号 US201313854965 申请日期 2013.04.02
申请人 CHEN KUO-TSO;OPTROMAX ELECTRONICS CO., LTD 发明人 CHEN KUO-TSO
分类号 H01L33/62 主分类号 H01L33/62
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