发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
摘要 A method of manufacturing a semiconductor device, includes: providing a first adhesive layer on a support member; providing a film on the first adhesive layer; arranging a semiconductor element on the film; providing a resin layer on the film on which the semiconductor element is arranged, and forming a substrate including the semiconductor element and the resin layer on the film; and separating the film and the substrate from the first adhesive layer.
申请公布号 US2013217189(A1) 申请公布日期 2013.08.22
申请号 US201313749159 申请日期 2013.01.24
申请人 FUJITSU LIMITED;FUJITSU LIMITED 发明人 SASAKI SHINYA;ISHIZUKI YOSHIKATSU;TANI MOTOAKI
分类号 H01L21/58 主分类号 H01L21/58
代理机构 代理人
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