| 发明名称 |
METHOD FOR TREATING A SUBSTRATE AND A SUBSTRATE |
| 摘要 |
A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
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| 申请公布号 |
US2013214331(A1) |
申请公布日期 |
2013.08.22 |
| 申请号 |
US201113881420 |
申请日期 |
2011.11.08 |
| 申请人 |
LAUKKANEN PEKKA;LANG JOUKO;PUNKKINEN MARKO;TUOMINEN MARJUKKA;TUOMINEN VEIKKO;DAHL JOHNNY;VAYRYNEN JUHANI;TURUN YLIOPISTO |
发明人 |
LAUKKANEN PEKKA;LANG JOUKO;PUNKKINEN MARKO;TUOMINEN MARJUKKA;TUOMINEN VEIKKO;DAHL JOHNNY;VAYRYNEN JUHANI |
| 分类号 |
H01L29/02;H01L21/02;H01L29/205 |
主分类号 |
H01L29/02 |
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