发明名称 APPLICATION OF FLUORINE DOPED TIN (IV) OXIDE SNO2:F FOR MAKING A HEATING LAYER ON A PHOTOVOLTAIC PANEL, AND THE PHOTOVOLTAIC PANEL
摘要 The invention consists in application of fluorine doped tin (IV) oxide SnO2:F (FTO) for making a heating layer on a photovoltaic panel. The invention consists also in a photovoltaic panel characterized in that its front part (1) is covered with a conductive layer (2) of fluorine doped tin (IV) oxide SnO2:F, with the electrodes (3) deposited thereon. The conductive layer (2) becomes a heating layer when connected to the source of electric current. In preferred embodiment a transarent polymer film (4) is applied thereon, inseparably and permanently bound with the conductive layer (2) of fluorine doped tin (IV) oxide SnO2:F and the photovoltaic cell (5).
申请公布号 CA2863027(A1) 申请公布日期 2013.08.22
申请号 CA20132863027 申请日期 2013.02.14
申请人 ML SYSTEM SPOLKA Z OGRANICZONA ODPOWIEDZIALNOSCIA 发明人 SKUPIEN, KRZYSTOF;BORATYNSKI, PAWEL;STANEK, EDYTA;CYCON, DAWID
分类号 H01L31/042 主分类号 H01L31/042
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