发明名称 MANUFACTURING METHOD OF PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a piezoelectric device that improves bonding strength between a cap type lid body and a base substrate by laser beam irradiation and further enhances airtightness of an accommodation space of a piezoelectric element.SOLUTION: There is provided a manufacturing method of a piezoelectric device comprising: a piezoelectric element 20; a base substrate 30 on which the piezoelectric element 20 is mounted; a recessed portion 41 for inwardly covering the piezoelectric element 20; and a cap type lid body 40 having a flange 42 which surrounds a periphery of the recessed portion 41 and is bonded to the base substrate 30. The manufacturing method of the piezoelectric device comprises the steps of: forming metallized wiring 36 at a joint portion of the base substrate 30 bonded to the lid body 40; bringing the flange 42 into contact with the metallized wiring 36 via a bonding material 50; and irradiating the flange 42 with a laser beam such that an irradiation axis of the laser beam is parallel to and along a side wall surface of the lid body 40 and bonding the flange 42 and the metallized wiring 36.
申请公布号 JP2013165371(A) 申请公布日期 2013.08.22
申请号 JP20120026983 申请日期 2012.02.10
申请人 SEIKO EPSON CORP 发明人 TOMIOKA SHUNJI
分类号 H03H3/02;H01L23/02;H03H9/02 主分类号 H03H3/02
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