发明名称 |
WATER MARK DEFECT PREVENTION FOR IMMERSION LITHOGRAPHY |
摘要 |
A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
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申请公布号 |
US2013216949(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201313857453 |
申请日期 |
2013.04.05 |
申请人 |
COMPANY, LTD. TAIWAN SEMICONDUCTOR MANUFACTURING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-YU |
分类号 |
G03F7/20;G03F7/004 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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