| 摘要 |
The present invention aims to provide a film for forming a protective layer that is capable of preventing cracks in a low dielectric material layer of a semiconductor wafer while suppressing an increase in the number of steps in the manufacture of a semiconductor device. This object is achieved by a film for forming a protective layer on a bumped wafer in which a low dielectric material layer is formed, including a support base, an adhesive layer, and a thermosetting resin layer, laminated in this order, wherein the melt viscosity of the thermosetting resin layer is 1×102 Pa·S or more and 2×104 Pa·S or less, and the shear modulus of the adhesive layer is 1×103 Pa or more and 2×106 Pa or less, when the thermosetting resin layer has a temperature in a range of 50 to 120° C.
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