发明名称 |
METHOD OF SEMICONDUCTOR QUANTUM CASCADE LASERS MANUFACTURING |
摘要 |
<p>The present invention relates to a method of strained-layer quantum cascade lasers manufacturing characterized in that it entails manufacturing test layers, performing their measurements, determining growth parameters for the layers on the basis of these measurements and manufacturing a semiconductor cascade laser by epitaxial methods using said epitaxial growth parameters.</p> |
申请公布号 |
WO2013120988(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
WO2013EP53063 |
申请日期 |
2013.02.15 |
申请人 |
ISOS TECHNOLOGIES SARL |
发明人 |
WESOLOWSKI, MAREK;STRUPINSKI, WLODZIMIERZ |
分类号 |
H01L21/66;H01S5/34 |
主分类号 |
H01L21/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|