发明名称 |
METHOD FOR FORMING ISOLATION STRUCTURE |
摘要 |
[Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
|
申请公布号 |
US2013214383(A1) |
申请公布日期 |
2013.08.22 |
申请号 |
US201113881560 |
申请日期 |
2011.11.02 |
申请人 |
NAKAMOTO NAOKO;SUZUKI KATSUCHIKA;SUGAHARA SHINJI;NAGAHARA TATSURO;AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
NAKAMOTO NAOKO;SUZUKI KATSUCHIKA;SUGAHARA SHINJI;NAGAHARA TATSURO |
分类号 |
H01L21/762;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|