发明名称 METHOD FOR FORMING ISOLATION STRUCTURE
摘要 [Problem] To provide a method for forming an isolation structure having a low shrinkage percentage and a low tensile stress. [Means for Solving] A first polysilazane composition containing a porogen is cast on the surface of a substrate to form a coat, and then the coat is fired to form a porous siliceous film having a refractive index of 1.3 or less. Thereafter, the surface of the porous siliceous film is soaked with a second polysilazane composition, and then fired to form an isolation structure of a siliceous film having a refractive index of 1.4 or more.
申请公布号 US2013214383(A1) 申请公布日期 2013.08.22
申请号 US201113881560 申请日期 2011.11.02
申请人 NAKAMOTO NAOKO;SUZUKI KATSUCHIKA;SUGAHARA SHINJI;NAGAHARA TATSURO;AZ ELECTRONIC MATERIALS USA CORP. 发明人 NAKAMOTO NAOKO;SUZUKI KATSUCHIKA;SUGAHARA SHINJI;NAGAHARA TATSURO
分类号 H01L21/762;H01L29/06 主分类号 H01L21/762
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