发明名称 MEMORY CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 Included is a first transistor for controlling rewriting and reading of a first data, a second transistor for controlling rewriting and reading of a second data, a first inverter including an input terminal for the first data, a second inverter including an input terminal for the second data, a third transistor between an output terminal of the second inverter and the input terminal of the first inverter, a fourth transistors between the output of the first inverter and the input terminal of the second inverter, a fifth transistor for controlling rewriting and reading of the first data in the first capacitor, and a sixth transistor for controlling rewriting and reading of the second data in a second capacitor. The first data and the second data are held in the first capacitor and the second capacitor even while power supply is cut off.
申请公布号 US2013215661(A1) 申请公布日期 2013.08.22
申请号 US201313752908 申请日期 2013.01.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KOYAMA JUN
分类号 G11C5/06 主分类号 G11C5/06
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