| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device is provided with: a GaN layer; an anode electrode that forms a Schottky junction with a Ga face of the GaN layer; and an InGaN layer positioned between at least a part of the anode electrode and the GaN layer.
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| 申请公布号 |
US2013214287(A1) |
申请公布日期 |
2013.08.22 |
| 申请号 |
US201313845750 |
申请日期 |
2013.03.18 |
| 申请人 |
FUJITSU LIMITED;FUJITSU LIMITED |
发明人 |
OKAMOTO NAOYA;MINOURA YUICHI |
| 分类号 |
H01L29/20;H01L21/02 |
主分类号 |
H01L29/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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