| 摘要 |
<p>Provided is a semiconductor device manufacturing method that forms a multi-layer film into a step shape by plasma etching using a photoresist layer (PR) on the multi-layer film as a mask, the multi-layer film being formed by alternately stacking first and second films formed on a substrate and having different relative permittivities. The semiconductor device manufacturing method repeatedly executes: a first step of etching a first film, using a photoresist layer as a mask; a second step of etching the photoresist layer by plasma generated by setting the pressure of a processing chamber to 6 to 30 Torr and applying, to a lower electrode, a high-frequency power for plasma generation and a high-frequency power for biasing; and a third step of etching the second film, using the photoresist layer and the first film as a mask.</p> |
