发明名称 Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species
摘要 In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
申请公布号 US2013217176(A1) 申请公布日期 2013.08.22
申请号 US201213467868 申请日期 2012.05.09
申请人 MUNTEANU MARIANA RODICA;MURALI AMITH KUMAR;BARTHOLOMEUSZ BRIAN JOSEF;CHAWLA VARDAAN;AQT SOLAR, INC. 发明人 MUNTEANU MARIANA RODICA;MURALI AMITH KUMAR;BARTHOLOMEUSZ BRIAN JOSEF;CHAWLA VARDAAN
分类号 H01L31/18;C23C16/56 主分类号 H01L31/18
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