| 摘要 |
<p>Disclosed is a semiconductor package able to improve PI characteristics by incorporating a PI-characteristic-improving part in the package. The semiconductor package which is disclosed is one comprising a semiconductor chip, wherein the semiconductor package comprises: a substrate PCB which is formed so as to have a powersource-supplying power layer, and which is electrically connected with the semiconductor chip by means of an electrical mediator; and a power-integrity-characteristic improving element which is provided either between the semiconductor chip and the powersource-supplying power layer or on the semiconductor chip and the substrate PCB on the opposite side, and is provided in a region other than the region where the electrical mediator is positioned. In this way, power integrity characteristics can be improved by positioning the power-integrity-characteristic improving element on the inside of the semiconductor package (i.e. the substrate PCB floor surface) rather than positioning same on the outside of the semiconductor package. In particular, the size of the semiconductor package can be optimised by providing the power-integrity-characteristic improving element in a usable area.</p> |
