| 摘要 |
<p>Provided is a functional film, in which at least one combination of an organic layer and an inorganic layer is arranged on a base plate, wherein the inorganic layer contains silicon and nitrogen and is arranged on the organic layer, any foreign matter having a size larger than 500 mum is not present on the surface of the inorganic layer, and foreign matters each having a size of 5 to 500 mum are present on the surface of the inorganic layer at a density of 10 particles or less per 1 cm2. Also provided is a method for producing the functional film, wherein the inorganic layer is formed by plasma CVD using an electrode having a surface Ra of 15 to 50 mum and having recesses and protrusions, wherein the radius of the tip of each of the protrusions is 50 mum or more. The present invention provides a functional film that can exhibit high performance steadily, such as a gas barrier film having high gas barrier performance, and enables the suitable production of the functional film.</p> |
