发明名称 |
METHOD FOR SWITCHING A NORMALLY ON FIELD EFFECT TRANSISTOR |
摘要 |
<p>The invention relates to a method for switching a normally on field effect transistor, wherein a gate voltage with a negative sign, the magnitude of which is greater than a threshold voltage of the transistor, is applied in order to switch off the transistor, and wherein the gate voltage with the negative sign is switched off in order to switch on the transistor, and wherein the transistor is kept in the switched-on state without applying a gate voltage.</p> |
申请公布号 |
EP2628184(A1) |
申请公布日期 |
2013.08.21 |
申请号 |
EP20110771028 |
申请日期 |
2011.10.14 |
申请人 |
MICROGAN GMBH |
发明人 |
SOENMEZ, ERTUGRUL;KUNZE, MIKE;DAUMILLER, INGO |
分类号 |
H01L29/778;H01L29/20;H03K17/0412;H03K17/687 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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