| 发明名称 |
FERROELECTRIC FILM |
| 摘要 |
<p>A ferroelectric film is formed by an oxide that is described by a general formula AB1-xNbxO3. An A element includes at least Pb, and a B element includes at least one of Zr, Ti, V, W, Hf and Ta. The ferroelectric film includes Nb within the range of: 0.05≤x < 1. The ferroelectric film can be used for any of ferroelectric memories of 1T1C, 2T2C and simple matrix types. <IMAGE></p> |
| 申请公布号 |
EP1555678(B1) |
申请公布日期 |
2013.08.21 |
| 申请号 |
EP20030758823 |
申请日期 |
2003.10.23 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIJIMA, TAKESHI;HAMADA, YASUAKI;NATORI, EIJI;OHASHI, KOJI |
| 分类号 |
C04B35/49;H01G4/12;B05C5/00;B41J2/045;B41J2/055;B41J2/16;C01G25/00;C01G25/02;C01G33/00;C01G35/00;C04B35/491;H01B1/08;H01B3/12;H01G4/33;H01L21/02;H01L21/314;H01L21/316;H01L21/77;H01L21/8246;H01L21/84;H01L27/10;H01L27/105;H01L27/115;H01L41/08;H01L41/09;H01L41/18;H01L41/187;H01L41/318;H01L41/39;H02N2/00 |
主分类号 |
C04B35/49 |
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